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| HAT3006R Silicon N Channel / P Channel Power MOS FET High Speed Power Switching ADE-208-480 E (Z) 6th. Edition June 1997 Features * * * * Low on-resistance Capable of 4 V gate drive Low drive current High density mounting Outline SOP-8 8 5 76 3 12 78 DD 56 DD 4 2 G 4 G S1 S3 1, 3 Source 2, 4 Gate 5, 6, 7, 8 Drain Nch Pch HAT3006R Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Nch Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel dissipation Channel temperature Storage temperature Note: VDSS VGSS ID I D(pulse) I DR Pch Pch Tch Tstg Note2 Note3 Note1 Unit Pch -30 20 -4.5 -36 -4.5 V V A A A W W C C 30 20 6.5 52 6.5 2 3 150 -55 to +150 1. PW 10s, duty cycle 1 % 2. 1 Drive operation : When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW 10s 3. 2 Drive operation : When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW 10s 2 HAT3006R Electrical Characteristics (N channel) (Ta = 25C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time Note: 4. Pulse test Symbol V(BR)DSS V(BR)GSS I GSS I DSS VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss Crss t d(on) tr t d(off) tf VDF t rr Min 30 20 -- -- 1.0 -- -- 5 -- -- -- -- -- -- -- -- -- Typ -- -- -- -- -- 0.03 0.05 8 560 380 170 30 270 40 65 0.9 45 Max -- -- 10 10 2.0 0.045 0.08 -- -- -- -- -- -- -- -- 1.4 -- Unit V V A A V S pF pF pF ns ns ns ns V ns IF = 6.5A, VGS = 0 Note4 IF = 6.5A, VGS = 0 diF/ dt =20A/s Test Conditions I D = 10mA, VGS = 0 I G = 100A, VDS = 0 VGS = 16V, VDS = 0 VDS = 30 V, VGS = 0 VDS = 10V, I D = 1mA I D = 4A, VGS = 10V Note4 I D = 4A, VGS = 4V Note4 I D = 4A, VDS = 10V Note4 VDS = 10V VGS = 0 f = 1MHz VGS = 4V, ID = 4A VDD 10V 3 HAT3006R Electrical Characteristics (P channel) (Ta = 25C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time Note: 5. Pulse test Symbol V(BR)DSS V(BR)GSS I GSS I DSS VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss Crss t d(on) tr t d(off) tf VDF t rr Min -30 20 -- -- -1.0 -- -- 4 -- -- -- -- -- -- -- -- -- Typ -- -- -- -- -- 0.07 0.11 6 660 440 140 24 165 35 70 -0.9 60 Max -- -- 10 -10 -2.5 0.09 0.18 -- -- -- -- -- -- -- -- -1.4 -- Unit V V A A V S pF pF pF ns ns ns ns V ns IF = -4.5A, VGS = 0 Note5 IF = -4.5A, VGS = 0 diF/ dt =20A/s Test Conditions I D = -10mA, VGS = 0 I G = 100A, VDS = 0 VGS = 16V, VDS = 0 VDS = -30 V, VGS = 0 VDS = -10V, I D = -1mA I D = -3A, VGS = -10V Note5 I D = -3A, VGS = -4V Note5 I D = -3A, VDS = -10V Note5 VDS = -10V VGS = 0 f = 1MHz VGS = -4V, ID = -3A VDD -10V 4 HAT3006R Main Characteristics (N channel) Maximum Safe Operation Area 10 s PW Op er at ion 100 I D (A) Typical Output Characteristics 20 10 V I D (A) 100 s 1 m s 30 10 3 DC 16 6V 5V 4.5 V 4V Pulse Test = 10 Drain Current ms 12 1 (P W Operation in 0.3 this area is limited by R DS(on) 0.1 Ta = 25 C 0.03 1 shot Pulse 1 Drive Operation 0.01 0.1 0.3 1 3 10 30 100 Drain to Source Voltage V DS (V) Note 5 : When using the glass epoxy board (FR4 40x40x1.6 mm) < Note 10 5 s) Drain Current 3.5 V 8 3V VGS = 2.5 V 0 2 4 6 Drain to Source Voltage 8 10 V DS (V) 4 Typical Transfer Characteristics V DS(on) (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage 0.5 Pulse Test 20 Tc = -25 C 25 C 75 C ID (A) 16 0.4 Drain to Source Voltage 12 0.3 Drain Current 8 0.2 ID=5A 4 V DS = 10 V Pulse Test 0 1 2 3 Gate to Source Voltage 5 4 V GS (V) 0.1 2A 1A 0 2 4 6 Gate to Source Voltage 8 10 V GS (V) 5 HAT3006R Main Characteristics (N channel) Static Drain to Source on State Resistance vs. Drain Current 0.5 Pulse Test 0.2 0.1 V GS = 4 V Static Drain to Source on State Resistance vs. Temperature 0.10 Pulse Test 0.08 I D = 1 A, 2 A, 5 A V GS = 4 V Static Drain to Source on State Resistance R DS(on) ( ) Drain to Source On State Resistance R DS(on) ( ) 0.06 0.05 0.02 0.01 10 V 0.04 1 A, 2 A, 5 A 0.02 0 -40 10 V 0.005 0.2 0.5 2 1 Drain Current 10 I D (A) 5 20 0 40 80 120 160 Case Temperature Tc (C) Forward Transfer Admittance |yfs| (S) 20 10 5 Forward Transfer Admittance vs. Drain Current Reverse Recovery Time trr (ns) 500 Body-Drain Diode Reverse Recovery Time Tc = -25 C 75 C 200 100 50 2 1 0.5 0.2 0.2 25 C 20 10 5 0.2 di/dt = 20 A/s V GS = 0, Ta = 25C 0.5 1 2 5 10 20 Reverse Drain Current I DR (A) V DS = 10 V Pulse Test 0.5 1 2 5 10 20 Drain Current I D (A) 6 HAT3006R Main Characteristics (N channel) Typical Capacitance vs. Drain to Source Voltage 50 V DS (V) 10000 3000 1000 Dynamic Input Characteristics V GS (V) Gate to Source Voltage VGS = 0 f = 1 MHz I D = 6.5 A V DD = 5 V 10 V 25 V V DS V GS 20 Capacitance C (pF) 40 16 Ciss 300 100 30 10 0 10 20 30 40 50 Drain to Source Voltage V DS (V) Coss Crss Drain to Source Voltage 30 12 20 8 10 V DD = 25 V 10 V 5V 8 16 24 32 Gate Charge Qg (nc) 4 0 40 0 1000 Switching Characteristics 20 Reverse Drain Current I DR (A) Reverse Drain Current vs. Souece to Drain Voltage Pulse Test 16 V GS = 4 V, V DD = 10 V 500 PW = 3 s, duty < 1 % Switching Time t (ns) 200 100 tr tf 12 5V V GS = 0, -5 V 50 t d(off) t d(on) 8 20 10 0.1 4 0.2 0.5 1 Drain Current 2 5 I D (A) 10 0 0.4 0.8 1.2 1.6 2.0 Source to Drain Voltage V SD (V) 7 HAT3006R Main Characteristics (P channel) Typical Output Characteristics -10 V -8 V -6 V -5 V -4.5 V Maximum Safe Operation Area -100 I D (A) -20 100 s 10 s I D (A) -30 -10 -3 -1 DC PW 1m s -16 Pulse Test -4 V Drain Current Op on Operation in -0.3 this area is limited by R DS(on) -0.1 Ta = 25 C -0.03 1 shot Pulse 1 Drive Operation -0.01 -0.1 -0.3 -1 -3 -10 -30 -100 Drain to Source Voltage V DS (V) Note 5 : When using the glass epoxy board (FR4 40 x 40 x 1.6 mm) (P m s W Note <5 10 s) Drain Current er = ati 10 -12 -3.5 V -8 -3 V -4 -2.5 V VGS = -2 V 0 -2 -4 -6 Drain to Source Voltage -8 -10 V DS (V) Typical Transfer Characteristics -20 V DS = -10 V Pulse Test (A) Drain to Source Saturation Voltage vs. Gate to Source Voltage -0.5 Drain to Source Saturation Voltage V DS(on) (V) -16 -0.4 Pulse Test ID -12 -0.3 Drain Current -8 Tc = 75 C -4 25 C -1 -2 -3 Gate to Source Voltage -25 C -0.2 I D = -2 A -1 A -0.5 A -0.1 0 -4 -5 V GS (V) 0 -6 -2 -4 Gate to Source Voltage -8 -10 V GS (V) 8 HAT3006R Main Characteristics (P channel) Static Drain to Source on State Resistance vs. Drain Current 1 Pulse Test 0.5 0.2 VGS = -4 V 0.1 -10 V Static Drain to Source on State Resistance vs. Temperature 0.20 I D = -0.5, -1, -2 A Static Drain to Source on State Resistance R DS(on) ( ) Drain to Source On State Resistance R DS(on) ( ) 0.16 VGS = -4 V 0.12 0.05 0.08 -10 V 0.04 Pulse Test 0 -40 0 40 80 120 160 Case Temperature Tc (C) -0.5, -1, -2 A 0.02 0.01 -0.2 -0.5 -1 -2 Drain Current -5 -10 -20 I D (A) Forward Transfer Admittance vs. Drain Current Body-Drain Diode Reverse Recovery Time 1000 Forward Transfer Admittance |y fs | (S) 20 10 5 25 C 2 1 0.5 0.2 -0.2 V DS = -10 V Pulse Test -0.5 -1 -2 -5 -10 -20 Drain Current I D (A) 75 C Reverse Recovery Time trr (ns) Tc = -25 C 500 200 100 50 di / dt = 20 A / s VGS = 0, Ta = 25 C 20 10 -0.1 -0.2 -0.5 -1 -2 -5 -10 Reverse Drain Current I DR (A) 9 HAT3006R Main Characteristics (P channel) Typical Capacitance vs. Drain to Source Voltage 10000 Dynamic Input Characteristics V DS (V) Capacitance C (pF) 3000 1000 300 100 30 10 0 -10 -20 -30 Ciss Coss Crss -10 VDD = -5 V -10 V -25 V -4 Drain to Source Voltage -20 V DS V GS -8 -30 -12 VGS = 0 f = 1 MHz -40 -50 V DD = -25 V -10 V -40 -5 V -50 I D = -4.5 A 0 8 16 24 32 Gate Charge Qg (nc) -16 -20 40 Drain to Source Voltage V DS (V) 500 Switching Characteristics -20 Reverse Drain Current vs. Source to Drain Voltage Switching Time t (ns) 200 100 50 Reverse Drain Current I DR (A) tr tf t d(off) t d(on) V GS = -4 V, V DD = -10 V PW = 3 s, duty < 1 % -0.5 -1 -2 -5 Drain Current I D (A) -10 -16 V GS = -5 V -12 0, 5 V -8 20 10 -4 Pulse Test 0 -0.4 -0.8 -1.2 -1.6 -2.0 Source to Drain Voltage V SD (V) 5 -0.1 -0.2 10 Gate to Source Voltage V GS (V) 0 0 HAT3006R Power vs. Temperature Derating 4.0 Pch (W) Test Condition : When using the glass epoxy board (FR4 40x40x1.6 mm), PW < 10 s 3.0 Channel Dissipation 2 ive Dr 2.0 e Op 1 1.0 Dr ive ra tio n Op er at ion 150 Ta (C) 200 0 50 100 Ambient Temperature 11 HAT3006R Normalized Transient Thermal Impedance vs. Pulse Width (1 Drive Operation) 10 Normalized Transient Thermal Impedance s (t) 1 D=1 0.5 0.1 0.2 0.1 0.05 0.01 0.02 0.01 ch - f(t) = s (t) * ch - f ch - f = 125 C/W, Ta = 25 C When using the glass epoxy board (FR4 40x40x1.6 mm) u tp lse PDM PW T 0.001 1s ho D= PW T 0.0001 10 100 1m 10 m 100 m 1 10 100 1000 1000 Pulse Width PW (S) 10 Normalized Transient Thermal Impedance s (t) Normalized Transient Thermal Impedance vs. Pulse Width (2 Drive Operation) 1 D=1 0.5 0.1 0.2 0.1 0.05 0.01 0.02 0.01 ch - f(t) = s (t) * ch - f ch - f = 166 C/W, Ta = 25 C When using the glass epoxy board (FR4 40x40x1.6 mm) ls pu e PDM PW T 0.001 1s ho t D= PW T 0.0001 10 100 1m 10 m 100 m 1 10 100 1000 1000 Pulse Width PW (S) 12 HAT3006R N channel Switching Time Test Circuit Vin Monitor D.U.T. RL Vin Vin 4V 50 V DD = 10 V Vout 10% 10% 90% td(on) tr 90% td(off) tf 10% Vout Monitor Switching Time Waveform 90% P channel Switching Time Test Circuit Vin Monitor D.U.T. RL 90% Vin -4 V 50 V DD = -10 V Vout td(on) 90% 10% tr td(off) 90% 10% tf Vout Monitor Vin 10% Switching Time Waveform 13 HAT3006R Package Dimensions Unit: mm 5.0 Max 8 5 1 4 4.0 Max 1.75 Max 6.2 Max 0.25 Max 0 - 8 1.27 0.51 Max 0.25 Max 1.27 Max 0.15 0.25 M Hitachi code EIAJ JEDEC FP-8DA -- MS-012AA 14 HAT3006R When using this document, keep the following in mind: 1. This document may, wholly or partially, be subject to change without notice. 2. All rights are reserved: No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without Hitachi's permission. 3. Hitachi will not be held responsible for any damage to the user that may result from accidents or any other reasons during operation of the user's unit according to this document. 4. Circuitry and other examples described herein are meant merely to indicate the characteristics and performance of Hitachi's semiconductor products. Hitachi assumes no responsibility for any intellectual property claims or other problems that may result from applications based on the examples described herein. 5. No license is granted by implication or otherwise under any patents or other rights of any third party or Hitachi, Ltd. 6. MEDICAL APPLICATIONS: Hitachi's products are not authorized for use in MEDICAL APPLICATIONS without the written consent of the appropriate officer of Hitachi's sales company. Such use includes, but is not limited to, use in life support systems. Buyers of Hitachi's products are requested to notify the relevant Hitachi sales offices when planning to use the products in MEDICAL APPLICATIONS. Hitachi, Ltd. Semiconductor & IC Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 For further information write to: Hitachi America, Ltd. Semiconductor & IC Div. 2000 Sierra Point Parkway Brisbane, CA. 94005-1835 USA Tel: 415-589-8300 Fax: 415-583-4207 Hitachi Europe GmbH Electronic Components Group Continental Europe Dornacher Strae 3 D-85622 Feldkirchen Munchen Tel: 089-9 91 80-0 Fax: 089-9 29 30 00 Hitachi Europe Ltd. Electronic Components Div. Northern Europe Headquarters Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA United Kingdom Tel: 0628-585000 Fax: 0628-778322 Hitachi Asia Pte. Ltd. 16 Collyer Quay #20-00 Hitachi Tower Singapore 0104 Tel: 535-2100 Fax: 535-1533 Hitachi Asia (Hong Kong) Ltd. Unit 706, North Tower, World Finance Centre, Harbour City, Canton Road Tsim Sha Tsui, Kowloon Hong Kong Tel: 27359218 Fax: 27306071 Copyright (c) Hitachi, Ltd., 1997. All rights reserved. Printed in Japan. 15 |
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